Jungho Kim

Department of Materials Science and Metallurgy,
University of Cambridge,
27 Charles Babbage Road,
Cambridge, CB3 0FS

jk831@cam.ac.uk

Professional Experience:

• Research Associate (March 2021 - Present): Department of Materials Science and Metallurgy, Uiversity of Cambridge
• Postdoctoral Researcher (March 2020 - Feb 2021): Center for Integrated Nanostructure Physics, Sungkyunkwan University (SKKU)

Education:

• PhD (Sep 2012- Feb 2020): Department of Energy Science, Sungkyunkwan University, South Korea
      Thesis: "Phase Transformation and Optoelectronic Applications in van de Waals Layered Materials"
• BS (March 2006 - Aug 2012): Department of Mechanical Engineering, Sungkyunkwan University, South Korea

Research Interests:

• 2D materials based contact engineering and novel device applications

Publications:

• J. H. Kim, H. S. Lee, G. H. Ahn, J. Lee, H. M. Oh, J. Choi, Y. H. Lee, “Dielectric Nanowire Hybrids for Plasmon-Enhanced Light-Matter Interaction in 2D Semiconductors”, ACS Nano, 14, 11985-11994 (2020)
• H. Choi, B. H. Moon, J. H. Kim, S. J. Yun, G. H. Han, S. Lee, H. Z. Gul, Y. H. Lee, “Edge contact for carrier injection and transport in MoS2 field-effect transistors”, ACS Nano 13 (11), 13169-13175 (2019)
• J. H. Kim, J. Lee, H. Kim, S. J. Yun, J. Kim, H. S. Lee, Y. H. Lee, “Optical logic operation via plasmon-exciton interconversion in 2D semiconductors”, Scientific Reports 9, 9164 (2019)
• J. H. Kim, S. J. Yun, H. S. Lee, J. Zhao, H. Bouzid, and Y. H. Lee, “Plasma-Induced Phase Transition of SnS2 to SnS”, Scientific Reports 8, 10284 (2018)
• H. Lee, S. Bak, S-J. An, J. H. Kim, E. Yun, M. Kim, S. Seo, M. S. Jeong, H. Lee, “Highly Efficient Thin-Film Transistor via Cross-Linking of 1T Edge Functional 2H Molybdenum Disulfides”, ACS Nano 11 (12), 12832-12839 (2017)
• S. Kim, J. H. Kim, D. Kim, G. Hwang, J. Baik, H. Yang, S. Cho, “Post-patterning of an electronic homojunction in atomically thin monoclinic MoTe2”, 2D Materials 4 (2), 024004 (2017)
• J. H. Lee, H. Z. Gul, H. Kim, B. Hee Moon, S. Adhikari, J. H. Kim, H. Choi, Y. H. Lee, S. C. Lim, “Photocurrent Switching of Monolayer MoS2 Using a Metal–Insulator Transition”, Nano Letters 17 (2), 673-678 (2017)
• H. M. Oh, H. Jeong, G. H. Han, H. Kim, J. H. Kim, S. Y. Lee, S. Y. Jeong, S. Jeong, D. J. Park, K. K. Kim, Y. H. Lee, M. S. Jeong, “Modulating Electronic Properties of Monolayer MoS2 via Electron-Withdrawing Functional Groups of Graphene Oxide”, ACS Nano 10 (11), 10446-10453 (2016)
• G. H. Han, D. H. Keum, J. Zhao, B. G. Shin, S. Song, J. J. Bae, J. Lee, J. H. Kim, H. Kim, B. H. Moon, Y. H. Lee, “Absorption dichroism of monolayer 1T′-MoTe2 in visible range”, 2D Materials 3 (3), 031010 (2016)
• S. K. Kim, R. Bhatia, T-H. Kim, D. Seol, J. H. Kim, H. Kim, W. Seung, Y. Kim, Y. H. Lee, S-W. Kim, “Directional dependent piezoelectric effect in CVD grown monolayer MoS2 for flexible piezoelectric nanogenerators”, Nano Energy 22, 483-489 (2016)
• S. Cho, S. Kim, J. H. Kim, J. Zhao, D. H. Keum, J. Baik, D-H. Choe, K. J. Chang, K. Suenaga, S. W. Kim, Y. H. Lee, H. Yang, “Phase patterning of ohmic homojunction contact in MoTe2”, Science 349 (6248), 625-628 (2015)
• D. H. Keum, S. Cho, J. H. Kim, D.-H. Choe, H.-J. Sung, M. Kan, H. Kang, J.-Y. Hwang, S. W. Kim, H. Yang, K. J. Chang, Y. H. Lee, “Bandgap opening in few-layered monoclinic MoTe2”, Nature Physics 11 (6), 482 (2015)
• D. Lee, G. D. Kwon, J. H. Kim, E. Moyen, Y. H. Lee, S. Baik, D. Pribat, “Significant enhancement of the electrical transport properties of graphene films by controlling the surface roughness of Cu foils before and during chemical vapor deposition”, Nanoscale 6 (21), 12943-12951 (2014)